Rthjc

Listado rthjc

• Modulo Igbt Doble - Bsm50gb120dn2 - 78a/ v - Oferta

  

  Modulos igbt dobles marca eupec - oportunidad caracteristicas: collector-emitter voltage vce v collector-gate voltage rge = 20 k¿ vcgr gate-emitter voltage vge ± 20 dc collector current tc = 25 °c ic 78 a tc = 80 °c ic 50 a pulsed collector current, tp = 1 ms tc = 25 °c icpuls 100 a tc = 80 °c icpuls 156 a power dissipation per igbt tc = 25 °c ptot 400 w chip temperature tj + 150 °c storage temperature tstg - thermal resistance, chip case rthjc = 0vis vac dimensiones: altura: 303 k/w diode thermal resistance, chip case rthjcd = 05 mm longitud: 94 mm ancho: 34 mm estilo de montaje: screw6 insulation test voltage, t = 1min

  $ 1200