Cas latency 11 voltage
Listado cas latency 11 voltage
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Consultar sobre stock e imágenes del producto si no las encuentra cargada en el producto activo memoria so-dimm kingston (kvr16ls11/8) capacity 8gb type 204-pin ddr3 so-dimm speed ddr3l (pc3l ) cas latency 11 voltage 1
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It is dual voltage and can operate at 135v cas latency: 11 number of modules 1x 4gb number of pins: 240-pin dimm type: unbuffered component configuration:512meg x 64 about crucial technology memory module desktop modules that operate at speeds up to mt/s and have a cl11 latencya dual inline memory module (dimm) consists of a number of memory components (usually black) that are attached to a printed circuit board (usually green)to use ddr3 memory, your system motherboard must have 240-pin dimm slots and a ddr3-enabled chipseteach 240-pin dimm provides a 64-bit data path (72-bit for ecc or registered or fully buffered modules)crucial technology memory module specifications form factor: udimm capacity: 4gb ecc: non-ecc module type: ddr3l pc3l- speed: mt/s voltage: 1this is because a ddr3 sdram dimm will not fit into a standard ddr2 dimm socket or a ddr dimm socketit conforms to the industry standard udimm layout of 240 pins and is compatible with computers that take ddr3 udimm memory25 inches long and 1it is unbuffered and is non-ecc18 inches high, though the heights can varygarantia 12 meses aceptamos mercado pago envios a todo el paisthe number of black components on a 240-pin dimm can vary, but it always has 120 pins on the front and 120 pins on the back, for a total of -pin dimms are approximately 5the gold pins on the bottom of the dimm provide a connection between the module and a socket on a larger printed circuit boardwhile 240-pin ddr3 dimms, 240-pin ddr2 dimms, 184-pin ddr dimms and 168-pin dimms are approximately the same size, 240-pin dimms and 184-pin dimms have only one notch within the row of pinsthe pins on the front and back of a dimm are not connected to each other
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Ddr3l- so-dimm ddrunbuffer non-ecc memorycl=11 ram type ddr3l dimm type so-dimm frequency cas latency cl11 voltage 1además, para asegurar la compatibilidad y estabilidad entre plataformas, cada módulo se pone es testeado en diferentes configuraciones de sistemas que incluyen portátiles de uso común y programas de software de uso comúnmemoria notebook trascend 4gb (2x2gb) ddrmhz diseñado desde el principio para ser usado específicamente portátiles, los módulos transcend utilizan los chips del mayor nivel de calidad de los mejores fabricantes de chip dram, que son seleccionados tras pasar nuestros rigurosos tests y evaluaciones de estabilidad, incluyendo pruebas rigurosas en ambientes extremosnuestros módulos de memoria son adecuados para su uso en ordenadores portátiles de prácticamente todas las marcas y tiposestos módulos de memoria ofrecen un nivel sin igual de compatibilidad y la estabilidad
$ 700
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Yes component rank: 2rx8 cas latency: cl11 pin count: 240-pin voltage: 135v module type: server memory (not for desktops) additional information: low voltage memory module mas info: https://www35v low voltage memory module rdimm manufacturer: sk hyn1x part number: hmt41gr7afr8a-pb componemt densíty: 8gb product bus type: pc3l-128oor componed speed: ddr3-1600 registered / unbuffered / load reduced: registered error correction code (ecc)do?vseq=1025&cseq=75 por ser un producto delicado y fragil, es preferible entregar en persona, queda bajo su responsabilidad si decide que se le envíe por los medios de ml, sin embargo en caba y gran bs as consulte para coordinar fecha y hora de entrega (y buscaremos la mejor manera de ponernos de acuerdo) el precio es por modulo, en su envoltura antiestatica y empaque originalsk hynix 8gb ddr3-1600 rdimm reg ecc hmt41gr7afr8a-pb memor sk hynix 8gb pc3l-12800r ddr3-1600 reg ecc memory module partnumber hmt41gr7afr8a-pb product details: sk hynix 8gb pc3l-12800r ddr3-1600 registered ecc 2rx8 cl11 240 pin 1
Argentina
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4 ns supply voltage 18 v cas latency cl6 ram features 8k refresh expansion / port(s) required total qty 1 required slot memory form factor so-dimm 200-pin header brand samsung product line samsung packaged quantity 1 compatibility pc slot required type memory form factor so-dimm 200-pin total qty 1 general manufacturersamsungspecs general memory specification compliance pc memory speed 800 mhz data integrity check non-ecc upgrade type generic capacity 1 gb manufacturersamsung memory latency timings cl6 data integrity check non-ecc chips organization 64 x 16 access time 04 ns miscellaneous compliant standards rohs ram type dram form factor so-dimm 200-pin technology ddr2 sdram storage capacity 1 gb registered or buffered unbuffered module configuration 128 x 64 chips organization 64 x 16 access time 0
$ 99
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35v para servidor características de la memoria: código de producto: kth-pl313llq/32g fabricante: kingston capacidad: 32gb tipo de bus: pc3l-10600l velocidad: ddr3-1333 registered/unbuffered: load reduced cas latency: cl9 cantidad de pines: 240 voltaje: 135v (low voltage) información adicional: load reduced lrdimm, low voltage memory module lvdimm ideal para servidores hp gen8, dell, ibm hacemos envíos a todo el país por oca, utilizando los servicios de mercadoenvíosse puede retirar por vicente lópez, a 3 cuadras de puente saavedrahacemos factura a y bddr3 32gb rdimm ecc ddr3l 1
Argentina
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35v (low voltage) información adicional: load reduced lrdimm, low voltage memory module lvdimm ideal para servidores hp gen8, dell, ibm hacemos envíos a todo el país por oca, utilizando los servicios de mercadoenvíos35v para servidor hp dell ibm características de la memoria: código de producto: kth-pl313llq/32g fabricante: kingston capacidad: 32gb tipo de bus: pc3l-10600l velocidad: ddr3-1333 registered/unbuffered: load reduced cas latency: cl9 cantidad de pines: 240 voltaje: 1se puede retirar por vicente lópez, a 3 cuadras de puente saavedrahacemos factura a y bddr3 32gb rdimm ecc 1
Argentina
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The spd's are programmed to jedec standard latency ddr timing of 9-9-9 at 15v (v ~ v) • 667mhz fck for mb/sec/pin • 8 independent internal bank • programmable cas latency: • programmable additive latency: 0, cl - 2, or cl - 1 clock • programmable cas write latency(cwl) = 7 (ddr-bit pre-fetch • burst length: 8 (interleave without any limit, sequential with starting address “000” only), 4 with tccd = 4 which does not allow seamless read or write [either on the fly using a12 or mrs] • bi-directional differential data strobe • thermal sensor grade b • internal(self) calibration: internal self calibration through zq pin (rzq: 240 ohm ± 1%) • on die termination using odt pin • average refresh period 7memoria kingston 8gb ddrmhz, 8gbyte, 2rx8 1gx72-bit, pc modelo: kvrd3e9s/8g description valueram's 1g x 72-bit (8gb) ddr cl9 sdram (synchronous dram), 2rx8, ecc memory modules, based on eighteen 512m x 8-bit fbga components per modulethe electrical and mechanical specifications are as follows: features • jedec standard 19us at 85°c • asynchronous reset • pcb: height mm), double sided component::::::::: digital general service::::::::::::: somos mercadolíder todo tipo de requerimiento informático san martín - gba envíos a todos el país correo argentino o transporte ===================================each 240-pin dimm uses gold contact fingers5v (v ~v) power supply • vddq = 18us at lower than tcase 85°c, 3
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The spd is programmed to jedec standard latency mhz timing of 9-9-9 at 15v ± v • 667mhz fck for mb/sec/pin • 8 independent internal bank • programmable cas latency: • programmable additive latency: 0, cl - 2, or cl - 1 clock • programmable cas write latency(cwl) = 7(ddr-bit pre-fetch • burst length: 8 (interleave without any limit, sequential with starting address “000” only), 4 with tccd = 4 which does not allow seamless read or write [either on the fly using a12 or mrs] • bi-directional differential data strobe • internal(self) calibration: internal self calibration through zq pin (rzq: 240 ohm ± 1%) • on die termination using odt pin • on-dimm thermal sensor (grade b) • average refresh period 7the electrical and mechanical specifications are as follows: features • jedec standard 1) command time (trfcmin) row active time (trasmin) 36ns (minthis 240-pin dimm uses gold contact fingers and requires +19us at 85°c • asynchronous reset • pcb: height mm), double sided component specifications cl(idd) 9 cycles row cycle time (trcmin) 495v ± v power supply • vddq = 1) power w (operating) ul rating 94 v - 0 operating temperature 0° c to 85° c storage temperature -55° c to +100° c continued >>8us at lower than tcase 85°c, 3a page 1 description this document describes valueram’s m x 72-bit 8gb (mb) ddrmhz cl9 sdram (synchronous dram) registered w/parity, dual-rank memory module, based on thirtysix 512m x 4-bit ddrmhz fbga components) refresh to active/refresh 160ns (minkvrd3d4r9s/8g 8gb m x 72-bit pc cl9 registered w/parity 240-pin dimm kingston
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7-a capacity 256mb form factor ddr2 dimm 240-pin profile standard profile bus speed pc (ddrmhz) cas latency cl4 buffered unbuffered ecc non-ecc rank 1rx16 number of chips 4 sides populated single sided voltage 18v lead-free status lead freebrand infineon mpn hys64thu-3
$ 50
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5v cas latency 2desktop/laptop desktop capacity 512 mb speed 333mhz memory type ddr dimm memory class ddr memory socket dimm memory buffer unbuffered module type pc- pins 184 voltage 2
$ 599
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Memory technology: ddr sdram storage capacity: 256 mb memory form factor: dimm 184-pin memory modules quantity: 2 number of memory packages: 8 memory module configuration: 32 x 64 data width: 64 bit memory speed: 400mhz(pc) lead plating: gold cas latency: cl3 proprietary or industry standard: industry standard compliant devices: pc environment nominal supply voltage: 26 v dimensions&weight height: 3 cm width: 133 cm nominal weight: kg warranty and logistic warranty warranty products returnable: yes warranty term (month): lifetime warranty validation criteria: serial number logistic pack weight brutto (kg): kg pieces in pack: 1
$ 399
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Memory type rdram capacity per module 4gb number of module 8 pins 240 bus type pc error correction ecc cas latency cl9 data transfer rate mhz voltage 15v brand varies memoria ram dell t310 t410 t610 t710 c verificar compatibilidad la imagen son las del producto
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5v memory module manufacturer: micron part number: mt36jszfpz-1g4g1hg component density: 4gb product bus type: pcr component speed: ddr registered / unbuffered / load reduced: registered error correction code (ecc): yes component rank: 2rx4 cas latency: cl9 pin count: 240-pin voltage: 15v module type: server memory (not for desktops)micron 4gb pcr ddr registered ecc 2rx4 cl pin 1
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Descripcion suitable for notebook module specification 204pin so-dimm density 2gb/4gb/8gb ic configuration 128 x x x8 cas latency 9 working voltage 1
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Memory type rdram capacity per module 4gb number of module 8 pins 240 bus type pc error correction ecc cas latency cl9 data transfer rate mhz voltage 15v brand varies memoria ram dell t310 t410 t610 t710 c verificar compatibilidad
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Clanth informatica envíos en moto $140 - solo para caba -------------------------------------------------------------------------------------------------- suitable for notebook module specification 204pin so-dimm capacity 4gb ic configuration 128 x x x8 cas latency 9 working voltage 1
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General information: manufacturer: dell manufacturer part number: 370-abuk product name: 16gb ddr4 sdram memory module technical information: storage capacity: 16gb memory technology: ddr4 sdram number of modules: 1 x 16gb chips organization: x4 bus speed: mhz ddr/pc data integrity check: ecc signal processing: registered cas latency timings: cl15 rank features: 2rx4 voltage: 12v upgrade type: system specific physical characteristics: form factor: 288-pin dimm shipping dimensions: 175 (depth) shipping weight: 020 lb compatibility: poweredge r630 poweredge r730 poweredge r730xd poweredge t630 precision workstation r xl precision workstation t xl precision workstation t xl precision workstation t xl precision workstations r precision workstations t precision workstations t precision workstations ttiendas new technology srl - reseller dell oficial
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4g memoria for hp proliant server gen8 series 647647-071 general information: manufacturer: hp manufacturer part number: 647647-071 product name: 4gb ddr3 sdram memory module technical information: storage capacity: 4gb memory technology: ddr3 sdram number of modules: 1 x 4gb chips organization: x4 memory speed: 1333mhz ddr3-1333/pc3-10600 data integrity check: ecc features: single rank, registered ram features: low voltage, single rank cas latency timings: cl9 platform support: hp proliant server physical characteristics: form factor: 240-pin dimm shipping dimensions: 220 lb compatibility: - proprietary hp proliant server - dl160 gen8 - proprietary hp proliant server - dl360e gen8 - proprietary hp proliant server - dl360p gen8 - proprietary hp proliant server - dl380e gen8 - proprietary hp proliant server - dl560 gen8 - proprietary hp proliant server - ml350e gen8 - proprietary hp proliant server - sl230 gen8 - proprietary hp proliant server - sl230s gen8 - proprietary hp proliant server - bl420c gen8 - proprietary hp proliant server - bl460c gen8 - proprietary hp proliant server - bl660c gen8 - proprietary hp proliant server - ws460c gen8 - proprietary hp proliant storeeasy - 383000 (depth) shipping weight: 0
Argentina
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35v • tested speed mhz • spd latency • spd speed mhz • spd voltage 1especificaciones tecnicas • memory configuration dual channel • memory series apple sodimm • memory type ddr3l • memory size 16 gb (2 x 8 gb) • t ested latency • tested voltage 15v • speed rating pcmhz) • package memory format sodimm • performance profile none • package memory pin 204
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35v • tested speed mhz • spd latency • spd speed mhz • spd voltage 1especificaciones tecnicas • memory configuration dual channel • memory series apple sodimm • memory type ddr3l • memory size 8gb • tested latency • tested voltage 15v • speed rating pcmhz) • package memory format sodimm • performance profile none • package memory pin 204
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Memoria corsair sodimm ddr3l 4gb mhz low voltage capacidad: 4gb velocidad de frecuencia: mhz latencia cas: cl9 voltage: 135v temperatura de trabajo: 0°c to 85°c temperatura de almacenamiento: -55°c to 100°c dimensiones: 127 mm x 127 mm x 5 mm version: value select consultar stock antes de ofertar por favor
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35v registered/unbuffered unbuffered error checking non-ecc spd speed mhz spd voltage 1factura garantia oficial modelo fc15d-16gtzb series trident z memory type ddr4 capacity 16gb (8gbx2) multi-channel kit dual channel kit tested speed mhz tested latency tested voltage 120v fan lncluded no height 44 mm / 173 inch features intel xmp 20 (extreme memory profile) ready additional notes rated xmp frequency & stability depends on mb & cpu capability
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Memoria ram para pc ddrgb x 2 modelo: psd34gh pc cl9 the signature line 4gb ddr3 pc-pin dimm memory with heat shield from patriot is a dual rank, double-sided module with heat shield, designed to run at mhz frequency (pc) with a cas latency of -pin dual in-line memory module (dimm) with heat shield ddr3 pc mhz) dual data rate non-ecc, unbuffered dual rank, double-sided module auto and self refresh capability serial presence-detect (spd) patriot signature line 4gb ddr3 pc-pin dimm memory with heat shield limited lifetime warranty
$ 1500
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2 v - cas latency of 15 - dual ranked - x8 based chips - (by micron - crucial) excelente rendimiento gamer - voltaje 1con la memoria ddr4 crucial, las tasas de datos iniciales comienzan a tm / s y obtener mejor rendimiento, en comparación con las tasas de velocidad de las antiguas ddr3la memoria crucial ddr4 también ofrece velocidades de acceso de ráfaga más rápidas para mejorar el rendimiento secuencial de datos mediante la utilización de grupos de 4 bancos que son exclusivos de la tecnología ddr45v para la memoria de servidor ddr3 estándar2v en comparación con 1combinada con las funciones de ahorro de energía adicionales inherentes a la arquitectura de memoria ddr4, la memoria ddr4 de crucial puede ofrecer hasta un 40% de ahorro de energía en comparación con la tecnología ddr3 estándarademás, dado que se genera menos calor por módulo, es más fácil mantener los sistemas refrigerados8gb capacity - mhz clock speed - pc-pin udimm - 1este módulo de memoria viene con el doble de capacidad de respuesta y ofrece un aumento del ancho de banda de memoria de hasta 50% con 25,6 gb / sla memoria crucial ddr4 funciona con sólo 1
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2 v - cas latency of 15 - dual ranked - x8 based chips - (by micron - crucial) excelente rendimiento gamer - voltaje 1con la memoria ddr4 crucial, las tasas de datos iniciales comienzan a tm / s y obtener mejor rendimiento, en comparación con las tasas de velocidad de las antiguas ddr3la memoria crucial ddr4 también ofrece velocidades de acceso de ráfaga más rápidas para mejorar el rendimiento secuencial de datos mediante la utilización de grupos de 4 bancos que son exclusivos de la tecnología ddr45v para la memoria de servidor ddr3 estándarwan computers 100% calificaciones positivas barrio gral paz, córdoba capital envíos a todo el país, despachamos en el díaeste módulo de memoria viene con el doble de capacidad de respuesta y ofrece un aumento del ancho de banda de memoria de hasta 50% con 25,6 gb / s2v en comparación con 1combinada con las funciones de ahorro de energía adicionales inherentes a la arquitectura de memoria ddr4, la memoria ddr4 de crucial puede ofrecer hasta un 40% de ahorro de energía en comparación con la tecnología ddr3 estándar8gb capacity - mhz clock speed - pc-pin udimm - 1además, dado que se genera menos calor por módulo, es más fácil mantener los sistemas refrigeradosla memoria crucial ddr4 funciona con sólo 1
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2v ddr4 sdram 288-pin rdimm modulo de memoria para el servidor información general: fabricante: samsung número de pieza del fabricante: m393a2g40db0-cpb2q nombre del producto: módulo de memoria ddr4 sdram de 8gb información técnica: capacidad de almacenamiento: 8gb tecnología de memoria: ddr4 sdram número de módulos: 1 x 8 gb velocidad de bus: mhz ddr / pc comprobación de integridad de datos: ecc procesamiento de señales: registrado tiempos de cas latency: cl15 características del rango: single rank x4 voltaje: 1samsung m393a1g40db0-cpb2q 8gb (1x8gb) mhz pc ecc registrado cl15 rango individual x4 1
$ 980
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Memoria ram para servidor manufacturer: samsung part number: m393b2g70db0-yk0 component density: 16gb product bus type: pc3l-r component speed: ddr registered / unbuffered: registered error correction code (ecc): yes component rank: 2rx4 cas latency: cl11- para mas datost: https://memorypor favor, consultar stock y todas las duda antes de ofertarsu oferta es compromiso de compranet/product/m393b2g70db0-yk0-samsung-1x-16gb-ddr-rdimm-pc3l-r-dual-rank-x4-module/ se puede retirar en caballito o microcentro
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Memoria ram para servidor manufacturer: micron part number: mt36ksf1g72pz-1g4m1he component density: 8gb product bus type: pc3l-r component speed: ddr registered / unbuffered: registered error correction code (ecc): yes component rank: 2rx4 cas latency: cl9 - para mas datost: http://wwwpor favor, consultar stock y todas las duda antes de ofertarasp?product_id=#sthashsu oferta es compromiso de compracom/view_productdpu se puede retirar en caballito o microcentro
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Se saco de un server ibm manufacturer: micron part number: mt36ksf1g72pz-1g4k1ff component density: 8gb product bus type: pc3l-r component speed: ddr registered / unbuffered: registered error correction code (ecc): yes component rank: 2rx4 cas latency: clv