Tstg
Listado tstg
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Modulos igbt dobles marca eupec - oportunidad caracteristicas: collector-emitter voltage vce v collector-gate voltage rge = 20 k¿ vcgr gate-emitter voltage vge ± 20 dc collector current tc = 25 °c ic 78 a tc = 80 °c ic 50 a pulsed collector current, tp = 1 ms tc = 25 °c icpuls 100 a tc = 80 °c icpuls 156 a power dissipation per igbt tc = 25 °c ptot 400 w chip temperature tj + 150 °c storage temperature tstg - thermal resistance, chip case rthjc = 03 k/w diode thermal resistance, chip case rthjcd = 0vis vac dimensiones: altura: 306 insulation test voltage, t = 1min5 mm longitud: 94 mm ancho: 34 mm estilo de montaje: screw
$ 1200
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Npn epitaxial silicon transistor absolute maximum ratings ta=25°c unless otherwise noted electrical characteristics ta=25°c unless otherwise noted hfe classification symbol parameter value units vcbo collector-base voltage: bc546: bc: bc v v v vceo collector-emitter voltage: bc546: bc: bc v v v vebo emitter-base voltage: bc: bc v v ic collector current (dc) 100 ma pc collector power dissipation 500 mw tj junction temperature 150 °c tstg storage temperature - °c symbol parameter test condition min5 6 pf cib input capacitance veb=0units icbo collector cut-off current vcb=30v, ie=0 15 na hfe dc current gain vce=5v, ic=2ma vce (sat) collector-emitter saturation voltage ic=10ma, ib=05ma ic=100ma, ib=5ma mv mv vbe (on) base-emitter on voltage vce=5v, ic=2ma vce=5v, ic=10ma mv mv ft current gain bandwidth product vce=5v, ic=10ma, f=100mhz 300 mhz cob output capacitance vcb=10v, ie=0, f=1mhz 35ma ic=100ma, ib=5ma mv mv vbe (sat) base-emitter saturation voltage ic=10ma, ib=05v, ic=0, f=1mhz 9 pf nf noise figure: bc: bc: bc549: bc550 vce=5v, ic=200µa f=1khz, rg=2k¿ vce=5v, ic=200µa rg=2k¿, f=mhz db db db db classification a b c hfe